HB52E649E12-B6B (Elpida Memory)
512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
HB52E649E12-A6B/B6B
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
E00
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HB52RD648DC-B (Elpida Memory)
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit/ 133/100 MHz Memory Bus/ 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
HB52RF648DC-B, HB52RD648DC-B
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components)
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HB56SW3272ESK-5 (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
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HB52F649E1-75B (Elpida Memory)
512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 133 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC133SDRAM
HB52F649E1-75B
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM
E0021H20
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HM621400HC (Hitachi Semiconductor)
4M High Speed SRAM (4-Mword x 1-bit)
HM621400HC Series
4M High Speed SRAM (4-Mword × 1-bit)
ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description
The HM621400HC is a 4-Mbit hig
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HB56UW873E-F (Elpida Memory)
64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit
HB56UW873E-F
64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)
• 168-pin socket type package (Dual
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HB56SW3272ESK (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
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HM5225805B-B6 (Elpida Memory)
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-b
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HM621400H (Hitachi Semiconductor)
4M High Speed SRAM (4-Mword x 1-bit)
HM621400H Series
4M High Speed SRAM (4-Mword × 1-bit)
ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description
The HM621400H is a 4-Mbit high speed static
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HM624100HC (Hitachi Semiconductor)
4M High Speed SRAM (1-Mword x 4-bit)
HM624100HC Series
4M High Speed SRAM (1-Mword × 4-bit)
ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description
The HM624100HC is a 4-Mbit hig
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HB56UW1673E-F (Elpida Memory)
128MB Buffered EDO DRAM DIMM 16-Mword X 72-bit
HB56UW1673E-F
Description
The HB 56UW 1673E belongs to 8-byte DI MM (D ual in-line Memory Module) fa mily , and have bee n developed an optimized ma
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HB52E649E12-A6B (Elpida Memory)
512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
HB52E649E12-A6B/B6B
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
E00
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HB52RF648DC-B (Elpida Memory)
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit/ 133/100 MHz Memory Bus/ 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
HB52RF648DC-B, HB52RD648DC-B
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components)
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HM5225645F-B60 (Hitachi Semiconductor)
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM
HM5225645F-B60 HM5225325F-B60
256M LVTTL interface SDRAM 100 MHz 1-Mword × 64-bit × 4-bank/2-Mword × 32-bit × 4-bank
PC/100 SDRAM
ADE-203-1014C (Z)
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HM5225805B-75 (Elpida Memory)
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-b
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HB56UW3272ETK-F (Elpida Memory)
256MB Buffered EDO DRAM DIMM 32-Mword X 72-bit
HB56UW3272ETK-F
www.DataSheet4U.com
EO
Description Features
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16
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HM5117805 (Elpida Memory)
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
EO
Description Features
HM5117805 Series
16 M EDO DRAM (2-Mword × 8-bit) 2 k Refresh
E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z)) Jun. 27, 2001
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HM5225165B-75 (Elpida Memory)
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-b
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HM5225325F-B60 (Hitachi Semiconductor)
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM
HM5225645F-B60 HM5225325F-B60
256M LVTTL interface SDRAM 100 MHz 1-Mword × 64-bit × 4-bank/2-Mword × 32-bit × 4-bank
PC/100 SDRAM
ADE-203-1014C (Z)
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HM5165165F (Hitachi Semiconductor)
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165F Series HM5165165F Series
64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh
ADE-203-1058B(Z) Rev. 2.0 Nov. 30, 1999 Description
The Hit
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