HB56UW873E-F Datasheet - Elpida Memory

HB56UW873E-F 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit

HB56UW873E-F 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components) 168-pin socket type package (Dual lead out)  Lead pitch: 1.27 mm www.DataSheet4U.com Single 3.3 V supply: 3.3V ± 0.3V High speed  Access time: tRAC = 50/60 ns (max)  Access time: tCAC = 18/20 ns (max) Low power dissipation  Active mode: 4.41 W/3.76 W (max)  Standby mode (TTL): 100.8 mW (max) Buffered input except RAS and DQ .

HB56UW873E-F Features

* E0102H10 (1st edition) (Previous ADE-203-1125B (Z)) Jan. 31, 2001 The HB 56UW 873E belongs to 8 B yte DI MM (D ual In- line Memory Module) fa mily, and has bee n deve loped as an optimiz ed main memory solution for 4 and 8 B yte proc essor applica tions. The HB 56UW 873E is a 8M × 72 dynamic RAM m

HB56UW873E-F_ElpidaMemory.pdf