80W Datasheet | Specifications & PDF Download

SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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Philips Semiconductors TDA8920TH 2 x 80 W class-D audio amplifier October 23, 2001 Objective specification Version : 1.1 TDA8920TH Class-D audio amp

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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m o RB Modules .c U 4 t Applications e e h S a at Standards .D w w w Grounding and wiring integration devices for commercial/military aircraft. Descr

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® TDA7295S 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±38V) DMOS POWER STAGE HIGH OUTPUT POWER (80W @ THD = 1

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MPE-825A Industrial Power Supply 280W AC-DC ATX Power Supply 2.0 0.42 0.42 11.0 DC OUTPUT WIRES 14.4 AC-DC 15.0 0.5 13.80 4-TAPPING#6-32 6.4 2

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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Six-Pack XPT IGBT Part name (Marking on product) MIXA80W1200TED MIXA80W1200TED VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V 25, 26 17 NTC 1 2

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Silicon Carbide (SiC) Module – EliteSiC Power Module for OBC, 80 mohm, 1200 V, 20 A, Vienna Rectifier, in APM32 Series NVXK2KR80WDT Features • DIP S

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SiC Power MOSFET Module 1200 V, 80 mW, 31 A Full Bridge Power Module NVXK2PR80WXT2 Features • DIP Silicon Carbide Full Bridge Power Module for On−Bo

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D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Type ”F” Nominal current Nennstrom Alternating inp

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Product Specification Model Name(TV080WXM-NL3) Liquid Crystal Display SPECIFICATION FOR APPROVAL ( ) Preliminary Specification (●) Final Specificat

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MMBTSA1980W PNP Silicon Epitaxial Planar Transistor for general small signal amplifier applications. The transistor is subdivided into four groups, O,

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