80W Datasheet | Specifications & PDF Download

® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

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SPECIFICATION FOR LCD MODULE MODULE NO: AFL800480W-7.0N-7BA0-T REVISION NO: A1 Customer’s Approval: PREPARED BY (RD ENGINEER) CHECKED BY APPROVED BY

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) .209 .220 OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature

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Chunghwa Picture Tubes, Ltd. Technical Specification 5k4T : o Date : 2013 / 08 / 26 TFTͲLCD CLAA080WQ05 (tentative) Accepted by: APPROVED BY CHECKED

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7G

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D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Type ”F” Nominal current Nennstrom Alternating inp

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® TDA7295S 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±38V) DMOS POWER STAGE HIGH OUTPUT POWER (80W @ THD = 1

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. OD-880WJ FEATURES GLASS .006 HIGH MAX .015 ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High

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Ordering number : ENA1505A SB80W06T Schottky Barrier Diode 60V, 8A, Low IR, Monolithic Dual TP Common Cathode Applications • http://onsemi.com High

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QPM2239 13 – 15.5 GHz 80W GaN Power Amplifier Module Product Overview Qorvo’s QPM2239 is a packaged, high-power Ku-band amplifier module, fabricated

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Six-Pack XPT IGBT Part name (Marking on product) MIXA80W1200TED MIXA80W1200TED VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V 25, 26 17 NTC 1 2

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Converter - Brake - Inverter Module XPT IGBT MIXA80WB1200TEH Three Phase Rectifier Brake Three Phase Chopper Inverter VRRM = 1600 V VCES = 1200

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Bulletin I20207 rev. C 03/04 STANDARD RECOVERY DIODES GEN II DO5 Features High surge current capability Designed for a wide range of applications Stu

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MOSFETs Silicon N-Channel MOS (DTMOS) TK12A80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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