MIXA80WB1200TEH - IGBT

Datasheet Details

Easy paralleling due to the positive temperature coefficient of the on-state voltage.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Published: Aug 22, 2016 |