* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
* Thin wafer technology
MIXA80W1200TEH Datasheet (276.45 KB)
MIXA80W1200TEH
IXYS
276.45 KB
Xpt igbt.
Six-Pack XPT IGBT
Part name (Marking on product) MIXA80W1200TEH
MIXA80W1200TEH
VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V
30, 31, 32
1 19
2 NTC.
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