* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
MIXA81WB1200TEH Datasheet (241.04 KB)
MIXA81WB1200TEH
IXYS
241.04 KB
Xpt igbt.
XPT IGBT Module
MIXA81WB1200TEH
tentative
3~ Rectifier
Brake Chopper
3~ Inverter
VRRM = I DAV = I FSM =
1600 V VCES = 1200 V VCES = 1200 V 290 .
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