* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
* Thin wafer technology
MIXA81H1200EH Datasheet (243.27 KB)
MIXA81H1200EH
IXYS
243.27 KB
Igbt module.
IGBT Module H Bridge
Part name (Marking on product) MIXA81H1200EH
MIXA81H1200EH
VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V
13, 21 1 2
3 4 14, 2.
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