8192-BIT Datasheet | Specifications & PDF Download

3.3 VOLT HIGH-DENSITY SUPERSYNC II™ 72-BIT FIFO 512 x 72, 1,024 x 72 2,048 x 72, 4,096 x 72 8,192 x 72, 16,384 x 72 32,768 x 72, 65,536 x 72 www.Data

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Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, L

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MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5368192W high density memory module is a CMOS dynamic RAM organized in 8192K x 36 bit words. The mo

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Random-Access Memories (RAMs) _______________________ CDM6264 NC AI2 A7 A. AS •• A' A2 AI AD 1/01 1/02 I103 v•• •• 6 10 .. 12 I. 28 VDD 27 iVf 2. C

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Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr

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Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, L

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Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, L

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Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr

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Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr

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www.DataSheet4U.com FINAL Am27C64 64 Kilobit (8,192 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — 45 ns s Low power consumpti

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EN29GL064AT/EN29GL064AB EN29GL064AT/EN29GL064AB 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only F

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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