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Si8273 - 4-Amp ISOdriver
Si827x Data Sheet 4 Amp ISOdriver with High Transient (dV/dt) Immunity The Si827x isolators are ideal for driving power switches used in a wide vari.B82733V - Power line choke
Power line chokes Current-compensated frame core double chokes 300 V AC / 500 V DC, 0.7 … 2.3 A, 10 … 100 mH, +40 °C Series/Type: Date: B82733F/V N.B82733F - Power line choke
Power line chokes Current-compensated frame core double chokes 300 V AC / 500 V DC, 0.7 … 2.3 A, 10 … 100 mH, +40 °C Series/Type: Date: B82733F/V N.SGM8273-4 - Rail-to-Rail I/O Operational Amplifiers
SGM8273-1/SGM8273-2/SGM8273-4 Low Noise, High Precision, High Voltage, Rail-to-Rail I/O Operational Amplifiers GENERAL DESCRIPTION The SGM8273-1 (sin.ISL8273M - 80A Single Channel Digital PMBus Step-Down Power Module
DATASHEET ISL8273M 80A Single Channel Digital PMBus Step-Down Power Module FN8704 Rev.4.00 Nov 9, 2017 The ISL8273M is a complete PMBus enabled DC/.AM82731-003 - RF & MICROWAVE TRANSISTORS
AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CA.AM82731-006 - RF & MICROWAVE TRANSISTORS
AM82731-006 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAP.AM82731-012 - RF & MICROWAVE TRANSISTORS
AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTE.AM82731-025 - RF & MICROWAVE TRANSISTORS
AM82731-025 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZ.AM82731-050 - RF & MICROWAVE TRANSISTORS
AM82731-050 . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSW.V827316K04S - 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
MOSEL VITELIC V827316K04S 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features ■ 184 Pin Unbuffered 16,777,216 x.V827332K04S - 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
MOSEL VITELIC V827332K04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features ■ 184 Pin Unbuffered 33,554,432 x.V827332N04S - 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE
MOSEL VITELIC V827332N04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE PRELIMINARY Features ■ 184 Pin Registered 33,554,432 x.V827332U04S - 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE
MOSEL VITELIC V827332U04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE PRELIMINARY Features ■ 184 Pin Registered 33,554,432 x.SC8273 - Dual N-Channel Enhancement Mode Field Effect Transistor
SC8273Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VSSS IS RSS(O.