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H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash F20 64Gb MLC NAND Flash Memory TSOP Legacy This document is a general product descri

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product descri

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SC74HC595 8-BIT SHIFT REGISTER (SERIAL INPUT, 3S PARALLEL OUTPUT WITH LATCHES) DESCRIPTION SC74HC595 utilizes advanced CMOS technology, and has 8-

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R EM MICROELECTRONIC - MARIN SA EM6819Fx-A00x, EM6819Fx-A10x EM6819Fx-B00x, EMww6w.8Da1taS9heFetx4U-.cBom10x Sub-1V (0.6V) 8bit Flash MCU DC-DC Conv

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SC74HC595 8-BIT SHIFT REGISTER (SERIAL INPUT, 3S PARALLEL OUTPUT WITH LATCHES) DESCRIPTION SC74HC595 utilizes advanced CMOS technology, and has 8-

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MX23C4000 4M-BIT MASK ROM (8 BIT OUTPUT) FEATURES • Bit organization - 512K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current

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K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to

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HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Document Title 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History Rev

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INDEX MX23C1010 1M-BIT MASK ROM (8 BIT OUTPUT) FEATURES • Bit organization - 128K x 8 (byte mode) • Fast access time - Random access: 45ns (max.) • C

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Data Sheet-sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm HY62256A-(I) Series 32Kx8bit CMOS SRAM Description Features The Fully static

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HY27UF(08/16)2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product descrip

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Data Sheet-sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm HY62256A-(I) Series 32Kx8bit CMOS SRAM Description Features The Fully static

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HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 13

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K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to

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K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to

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K4F170811D, K4F160811D K4F170812D, K4F160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8

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