HY628100A Datasheet - Hynix Semiconductor

HY628100A - 128Kx8bit CMOS SRAM

The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit.

The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology.

It is particulary well suited for used in high density low po

HY628100A Features

* Fully static operation and Tri-state output

* TTL compatible inputs and outputs

* Battery backup(L/LL-part) - 2.0V(min) data retention

* Standard pin configuration - 32pin 525mil SOP - 32pin 8x20mm TSOP-I(Standard) Standby Current(uA) L LL 1mA 100 20 Temperature (

Datasheet Details

HY628100A

Hynix Semiconductor

128.00 KB

128kx8bit cmos sram.

📁 Related Datasheet

📌 All Tags