HY628400A Datasheet - Hynix Semiconductor

HY628400A 512K x8 bit 5.0V Low Power CMOS slow SRAM

and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 07 / Apr. 2001 Hynix Semiconductor HY628400A Series DESCRIPTION The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized .

HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.06.2000 Aug.04.2000 Dec.04.2000 Remark Final Final Final 07 Apr.30.2001 Final This document i.

HY628400A Features

* Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) -. 2.0V(min) data retention

* Standard pin configuration -. 32pin 525mil SOP -. 32pin 400mil TSOP-II (Standard and Reversed)

HY628400A_HynixSemiconductor.pdf