K4S280832M - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

The K4S280832M by Samsung semiconductor is a 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL. Below is the official datasheet preview.

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K4S280832M 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S280832M** 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S280832M
Manufacturer	Samsung semiconductor
File Size	126.07 KB
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S280832M_Samsungsemiconductor.pdf
Additional preview pages of the K4S280832M datasheet.

K4S280832M Product details

Description

The K4S280832M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

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Other Datasheets by Samsung semiconductor

K4S280832A - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832C - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832E-TC75 - 128Mb E-die SDRAM Specification
K4S280832E-TL75 - 128Mb E-die SDRAM Specification
K4S280832F-TC75 - 128Mb F-die SDRAM Specification
K4S280832F-TL75 - 128Mb F-die SDRAM Specification

Published: Apr 7, 2005 |