8K-bit Datasheet | Specifications & PDF Download

® LY62L1024 Rev. 1.2 128K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Icc De

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® LY6112816 Rev. 1.1 5V 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Revised Test Condi

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ASAHI KASEI [AK6420A/40A/80A] AK6420A / 40A / 80A 2K / 4K / 8Kbit Serial CMOS EEPROM Features † ADVANCED CMOS EEPROM TECHNOLOGY † Wide Vcc (1.8V ∼

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CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit DDR II+ SRAM Two-Word Burst Architecture

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 UTRON Rev. 1.7 FEATURES „ „ UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The UT62L1024 is a 1,048,576-bit low power CMOS static

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1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L

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NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM October 1998 NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM General Des

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www.DataSheet4U.com STw5094 18 BIT 8kHz TO 48kHz LOW POWER STEREO AUDIO DAC WITH INTEGRATED POWER AMPLIFIERS AND VOICE CODEC FEATURES: Complete STERE

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SC23M28 8K-BIT MEMORY CARD IC DESCRIPTION SC23M28 is a smart card module utilizing CMOS EEPROM technology. 1024 bytes main memory with write-protect f

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® LY62L20488 Rev. 0.3 2048K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised the

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CY62128EV30 MoBL® 1-Mbit (128K × 8) Static RAM 1-Mbit (128K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40

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® LY61L1024 Rev. 2.2 128K X 8 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 2.0 Rev. 2.1 Rev.2.2 Description Initial Is

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AT49(H)BV/(H)LV01 Features • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 55 ns • Internal

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NEe NEe Microcomputers, Inc. }LPD23128 ~rn~[~~~~ffirnW FULLY DECODED 128K BIT MASK PROGRAMMABLE READ ONLY MEMORY OESCR I PTION The NEC IlPD23128

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NEe Microcomputers, Inc. NEe fL PD421 J.L PD421-1 fL PD421-2 fL PD421-3 J.L PD421-5 8K BIT STATIC RAM DESCR IPTION The NEC MPD421 is a very high s

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NEe Microcomputers, Inc. NEe fL PD421 J.L PD421-1 fL PD421-2 fL PD421-3 J.L PD421-5 8K BIT STATIC RAM DESCR IPTION The NEC MPD421 is a very high s

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M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

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M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPER

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