Sanyo
LC378000RP - Internally Synchronized Silicon Gate 8M (1 /048 /576-word x 8-bit / 524 /288-word x 16-bit) Mask ROM
Ordering number : EN*5793
CMOS IC
LC378000RP
Internally Synchronized Silicon Gate 8M (1,048,576word × 8-bit, 524,288-word × 16-bit) Mask ROM
Prelimi
(7 views)
Elpida Memory
EBD11ED8ABFB - 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 72 bits/ 2 Banks)
PRELIMINARY DATA SHEET
1GB Unbuffered DDR SDRAM DIMM
EBD11ED8ABFB (128M words × 72 bits, 2 Banks)
Description
The EBD11ED8ABFB is 128M words × 72 bit
(3 views)
Sanyo
LC36128ML-70 - 128K(16384 words X 8 bits) SRAM
(3 views)
OKI Semiconductor
MR26V25655J - 8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
OKI Semiconductor MR26V25655J
8M–Word × 32–Bit or 16M–Word × 16–Bit Page Mode
FEDR26V25655J-02-05
Issue Date: Jun. 8, 2004
P2ROM
PIN CONFIGURATION (
(3 views)
NEC
UPD44165082 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165082, 44165182, 44165362
18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION
Description
The µPD44165082 is a 2,09
(3 views)
NEC
UPD44164084 - (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164084, 44164184, 44164364
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
Description
The µPD44164084 is a 2,097,
(3 views)
NEC
UPD46128512-X - 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μPD46128512-X
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Desc
(3 views)
Sanyo
LC36128ML-10 - 128K(16384 words X 8 bits) SRAM
(2 views)
OKI
MR27T6402L - 4M-Word x 16-Bit or 8M-Word x 8-Bit P2ROM
OKI Semiconductor
MR27T6402L
P2ROM4M–Word × 16–Bit or 8M–Word × 8–Bit
FEATURES
·4,194,304-word × 16-bit / 8,388,608-word × 8-bit electrically
switc
(2 views)
NEC
UPD44164085 - (UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164085, 44164185, 44164365
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
Description
The µPD4416408
(2 views)
NEC
UPD44165182 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165082, 44165182, 44165362
18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION
Description
The µPD44165082 is a 2,09
(2 views)
NEC
UPD44164182 - (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164082, 44164182, 44164362
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
Description
The µPD44164082 is a 2,097,
(2 views)
NEC
UPD44164184 - (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164084, 44164184, 44164364
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
Description
The µPD44164084 is a 2,097,
(2 views)
NEC
UPD44164364 - (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164084, 44164184, 44164364
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
Description
The µPD44164084 is a 2,097,
(2 views)
NEC
UPD44164082 - (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164082, 44164182, 44164362
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
Description
The µPD44164082 is a 2,097,
(2 views)
Elpida Memory
HB56UW1673E-F - 128MB Buffered EDO DRAM DIMM 16-Mword X 72-bit
HB56UW1673E-F
Description
The HB 56UW 1673E belongs to 8-byte DI MM (D ual in-line Memory Module) fa mily , and have bee n developed an optimized ma
(2 views)
OKI electronic
MR27V6452G - 4M-Word x 16-Bit or 8M-Word 8-Bit P2ROM
www.DataSheet.co.kr
OKI Semiconductor MR27V6452G
4M–Word × 16–Bit or 8M–Word × 8–Bit Page Mode
FEDR27V6452G-02-06
Issue Date: Jul. 9, 2004
P2ROM
PI
(2 views)
OKI electronic componets
MSC23836AA-80DS20 - 8M-Word x 36-Bit DRAM Module
(2 views)
Renesas
uPD46184184B - 18M-BIT DDR II SRAM 4-WORD BURST OPERATION
μPD46184184B
Datasheet
18M-BIT DDR II SRAM 4-WORD BURST OPERATION
R10DS0120EJ0200 Rev.2.00
Nov 09, 2012
Description
The μPD46184184B is a 1,048,5
(2 views)
Hitachi Semiconductor
HM5212325F-B60 - 128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
HM5212325F-B60
128M LVTTL interface SDRAM 100 MHz 1-Mword × 32-bit × 4-bank PC/100 SDRAM
ADE-203-1053A (Z) Rev. 1.0 Oct. 18, 1999 Description
The Hit
(1 views)