Device under development A-GA10JT12 Normally â€.
GeneSiC
GA10JT12-CAL - Normally - OFF Silicon Carbide Junction Transistor
GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  250 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Except.
GeneSiC
GA10JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope.
GeneSiC
A-GA10JT12 - Super Junction Transistor
Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mÈ Features • 22.
GeneSiC
GA10JT12-263 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope.