A109 Datasheet | Specifications & PDF Download

: I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequ

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OA109 ‘XC Series’ AC Fan - 115V, 230V 120x38mm (4.7”x 1.5”) Frame Impeller Connection Motor Bearing System Insulation Resistance Dielectric Strength

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: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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: 2SA1090 I2 ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPL

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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Drive

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INTEGRATED CIRCUITS DATA SHEET TEA1096; TEA1096A Speech and listening-in IC Product Specification File under Integrated Circuits, IC03 November 1994

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INTEGRATED CIRCUITS DATA SHEET TEA1096; TEA1096A Speech and listening-in IC Product Specification File under Integrated Circuits, IC03 November 1994

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STA108x, STA109x Accordo2 family – Automotive dual core processor for car radio and display audio application Datasheet - production data LFBGA361 (

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isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complem

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STA108x, STA109x Accordo2 family – Automotive dual core processor for car radio and display audio application Datasheet - production data LFBGA361 (

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INTEGRATED CIRCUITS DATA SHEET TEA1098 Speech and handsfree IC Product specification Supersedes data of 1999 May 20 File under Integrated Circuits, I

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isc Silicon PNP Power Transistor 2SA1094 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement t

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2S

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type

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2SA1091 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features ,,。 High voltage,

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INTEGRATED CIRCUITS DATA SHEET TEA1093 Hands-free IC Product specification Supersedes data of 1995 May 18 File under Integrated Circuits, IC03 1996 F

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