A109 Datasheet | Specifications & PDF Download

: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition

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: 2SA1090 I2 ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPL

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ETA1096 1MHz High Current High Efficiency Synchronous Step-Up Converter in ESOP8 DESCRIPTION ETA1096 is an ETA Solutions’ high efficiency, high fre

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: I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequ

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www.vishay.com VSMA1094250X02 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology LINKS TO ADDITIONAL RESO

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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Drive

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1093 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC2563. . Recommended fo

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INTEGRATED CIRCUITS DATA SHEET TEA1099H Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer Product specification Supersedes

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STA108x, STA109x Accordo2 family – Automotive dual core processor for car radio and display audio application Datasheet - production data LFBGA361 (

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Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION ·With TO-3P(I) package ·Complem

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION ·With MT-200 package ·Complemen

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION ·With MT-200 package ·Complemen

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type

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CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capabil

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2SA1091 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features ,,。 High voltage,

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