2SA1090 Datasheet - Toshiba

2SA1090 Silicon PNP transistor

2SA1090 Features

* High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.)

* High Gain and Excellent hps Linearity : hFE=70 ~ 400 at Vce=-1V, I c=-10mA

* Complementary to 2SC2550. Unit in mm 05.8UkX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage Collector-Emitter Volt

Datasheet Details

2SA1090

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Silicon pnp transistor.

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