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2SA1090
I2
)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPLICATIONS.
FEATURES • High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.) • High Gain and Excellent hps Linearity
: hFE=70 ~ 400 at Vce=-1V, I c=-10mA
• Complementary to 2SC2550.
Unit in mm
05.8UkX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO vEBO
IB PC
L stg
RATING -60 -50
UNIT
-200
mA
-50
mA
300
mW
175
-65^175
1. EMITTER Z. BASE 3.
2SA1090 Datasheet
