* High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.)
* High Gain and Excellent hps Linearity : hFE=70 ~ 400 at Vce=-1V, I c=-10mA
* Complementary to 2SC2550. Unit in mm 05.8UkX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage Collector-Emitter Volt
2SA1090
132.23 KB
Silicon pnp transistor.
:
2SA1090
I2
)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPL.
📁 Related Datasheet
2SA1091 - TRANSISTOR
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2SA1091
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Rev.E Mar.-2016
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/ Descriptions
TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.
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,,。 High voltage,.
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(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1093
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
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isc Silicon PNP Power Transistor
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2SA1094 - Silicon PNP Transistor
(Toshiba)
:
2SA1094
I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition .
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