* High collector to emitter voltage VCEO
* TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5
* 0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to e
2SA1096
Panasonic Semiconductor
70.04 KB
Silicon npn transistor.
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SA1096 and 2S.
📁 Related Datasheet
2SA1090 - Silicon PNP transistor
(Toshiba)
:
2SA1090
I2
)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPL.
2SA1091 - TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091
2SA1091
High Voltage Control Applications Plasma Display, Nixie Tube Drive.
2SA1091 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1091
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.
/ Features
,,。 High voltage,.
2SA1091 - SILICON PNP TRANSISTOR
(LZG)
2SA1091(3CG1091)
PNP /SILICON PNP TRANSISTOR
:,,/Purpose: High voltage control,
plasma display, nixie tube driver, cathode ray tube brightness cont.
2SA1093 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1093
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES . Complementary to 2SC2563. . Remended fo.
2SA1093 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1093
DESCRIPTION ·With TO-3P(I) package ·Complem.
2SA1093 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type.
2SA1094 - Silicon PNP Transistor
(Toshiba)
:
2SA1094
I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition .
