A1112 Datasheet | Specifications & PDF Download

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION ·With TO-220 package ·C

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INTEGRATED CIRCUITS DATA SHEET TEA1112; TEA1112A Low voltage versatile telephone transmission circuits with dialler interface Product specification S

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Features Package Product features 1112C Series Single Color High Brightness Type 1608 (h=0.5mm) Type, Milky White resin Outer Dimension 1.6 x 0.8 x 0

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HFA1112, HFA1112A TM Data Sheet December 2000 File Number 2992.6 850MHz, Low Distortion Programmable Gain Buffer Amplifiers The HFA1112/12A are cl

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isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Good Linearity of hFE ·Complement

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Data Sheet January 2001 A1112 High-Power 1550 nm DFB Source Lasers Description The A1112 1550 nm DFB laser modules are highpower devices in a 14-pin

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INTEGRATED CIRCUITS DATA SHEET TEA1112; TEA1112A Low voltage versatile telephone transmission circuits with dialler interface Product specification S

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Product Guide F_1112H Series Thin Type AlInGaP SMT LED s Features • Compact 2012 (0805) package with super bright AlInGaP die • Excellent for membran

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SPECIFICATIONS USB 3.0 A TYPE Connector USB3.0 Series A Type, Right Angle T/ H 9 Pos. Mechanical Mating Force: 3.5kgf (7.71Lb) max. Unmating Force:

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DATASHEET HFA1112 850MHz, Low Distortion Programmable Gain Buffer Amplifiers FN2992 Rev 8.00 July 27, 2005 The HFA1112 is a closed loop Buffer feat

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SPECIFICATIONS USB 3.0 A TYPE Connector USB3.0 A Series Right Angle T/H 9 Pos. Mechanical Mating Force: initial 35N (7.87Lb) maximum. Unmating Force

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SPECIFICATIONS USB 3.0 A TYPE Connector USB3.0 A Series Right Angle T/H 9 Pos. Mechanical Mating Force: initial 35N (7.87Lb) maximum. Unmating Force

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