A1150 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~32

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Low VF Low IR SMD Schottky Barrier Rectifiers CDBA120LR-HF Thru. CDBA1200LR-HF Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Amp RoHS Device

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~32

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KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 1 TO-92S 1.Emitter 2. Collector 3. Base

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Surface Mount Zener Diode COMCHIP www.comchip.com.tw CZRA1110 Thru CZRA1350 Voltage: 110 - 350 Volts Power: 1.0 Watt Features Ideal for surface mou

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TVA ATOM® www.vishay.com Vishay Sprague Aluminum Capacitors + 85 °C, Miniature, Axial Lead FEATURES • Low leakage current • Long shelf life • Ideal

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A1150, A1152, A1153, A1155, A1156, A1157, and A1158 Chopper-Stabilized, Two-Wire Hall-Effect Switches FEATURES AND BENEFITS • AEC-Q100 automotive qu

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HFA1150 POSSIOBBLESOSLUHEBFTSAET1IP1TR0U0OTDEUPCRTODUCT 700MHz, SOT-23, Low Distortion Current Feedback Operational Amplifier DATASHEET FN4836 Rev

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