A1270 Datasheet | Specifications & PDF Download

ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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Elektronische Bauelemente KTA1270 -0.5A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-

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Be sure to visit ChipDocs site for more information http://www.chipdocs.com Be sure to visit ChipDocs site for more information http://www.chipdocs.c

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-40

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DIP Type ■ Features ● Excellent hFE Linearity ● Complementary to KTC3202. Transistors PNP Transistors KTA1270 TO-92 4.8 ± 0.3 Unit:mm 3.8 ± 0.3 5.

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Freescale Semiconductor Technical Data MMA1270KEG Rev 0, 11/2009 Low G Micromachined Accelerometer The MMA series of silicon capacitive, micromachin

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Freescale Semiconductor Technical Data Low G Micromachined Accelerometer The MMA series of silicon capacitive, micromachined accelerometers feature si

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Freescale Semiconductor Technical Data Document Number: MMA1270EG Rev 0, 04/2007 Low G Micromachined Accelerometer The MMA series of silicon capacit

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Surface Mount Zener Diode COMCHIP www.comchip.com.tw CZRA1110 Thru CZRA1350 Voltage: 110 - 350 Volts Power: 1.0 Watt Features Ideal for surface mou

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CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1270A3 Spec. No. : C305A3 Issued Date : 2013.01.16 Revised Date : Page N

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PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in p

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BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

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TA1270BF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1270BF PAL / NTSC VIDEO CHROMA AND SYNC PROCESSING SYSTEM FOR PIP / POP / PAP

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