A1300 Datasheet | Specifications & PDF Download

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm ·

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OSA13009 High Voltage Fast-Switching NPN Power Transistor  Features：  High Switching Speed  Low forward voltage drop  High efficiency and low p

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2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three gro

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Signetics Mlcrocontroller Products Voltage regulator with watchdog for microprocessor/controller systems Preliminary specification UAA1300 FEATURES

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INTEGRATED CIRCUITS DATA SHEET TDA1300T; TDA1300TT Photodetector amplifiers and laser supplies Preliminary specification Supersedes data of 1995 Nov

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SEMICONDUCTOR FJA13009 Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W 5 . 0 ±0 . 2 RoHS RoHS Nell

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Data Sheet, Rev. 1 August 2001 NetLight ® 2417J4A 1300 nm Laser Gigabit Transceiver s s s s s TTL signal-detect output Low power dissipation Single

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LITE-ON SEMICONDUCTOR SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single de

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DC COMPONENTS CO., LTD. R 2SA1300 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use

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FJA13009 FJA13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base

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UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm ·

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