A19-1 Datasheet | Specifications & PDF Download

RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION ·With TO-3PL package ·Complemen

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SA1941 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 A

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION ·With TO-3P(I) package ·Complem

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (m

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1940 DESCRIPTION ·With TO-3P(I) package ·Complem

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www.DataSheet4U.com Semiconductor 2SA1980 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturatio

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UMW R UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS UMW 3401C P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V   120 mΩ@-4.5V  150 mΩ@-2.5V  

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2SA1943 ® Pb Free Plating Product 2SA1943 Pb 150 Watt Silicon PNP Power Transistors DESCRIPTION ¡¤ With TO-3PL package ¡¤ Complement to type 2SC

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2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High tr

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (m

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-

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2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou

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Semiconductor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Informat

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SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5101 APPLICATIONS

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2SA1980 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -150 mA, -50 V PNP Plastic Encapsulated Trans

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2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design OPA197, OPA2197, OPA4197 SBOS737C – JANUARY 2

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High breakdown voltage: VCEO = −230 V (m

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TDA1904 4W AUDIO AMPLIFIER HIGH OUTPUT CURRENT CAPABILITY PROTECTION AGAINST CHIP OVERTEMPERATURE LOW NOISE HIGH SUPPLY VOLTAGE REJECTION SUPPLY VOLTA

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