A1962 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type

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SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. FEATURES High Collector Voltage : VCEO=-230V(Min.) Complementary to KTC5242A. Recommended f

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SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. FEATURES High Collector Voltage : VCEO=-230V(Min.) Complementary to KTC5242. Recommended fo

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www.DataSheet4U.com 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features ■ ■ ■ ■ High breakdown voltage VCEO > -23

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2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm • High breakdown voltage: VCEO = −230 V (m

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION ·With TO-3P(I) package ·Complem

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2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou

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www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Brea

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