2SA1962/FJA4213 — PNP Epitaxial Silicon Transist.
Fairchild Semiconductor
21
A1962 - 2SA1962
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou.
Inchange Semiconductor
11
2SA1962 - POWER TRANSISTOR
www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Brea.
Toshiba Semiconductor
7
2SA1962 - Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm • High breakdown voltage: VCEO = −230 V (m.
KEC
5
KTA1962A - TRIPLE DIFFUSED PNP TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. FEATURES High Collector Voltage : VCEO=-230V(Min.) Complementary to KTC5242A. Recommended f.
SavantIC
5
2SA1962 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION ·With TO-3P(I) package ·Complem.
ST Microelectronics
4
2STA1962 - High power PNP epitaxial planar bipolar transistor
www.DataSheet4U.com 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features ■ ■ ■ ■ High breakdown voltage VCEO > -23.
Inchange Semiconductor
2
KTA1962 - Silicon PNP Power Transistors
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type .
KEC
2
KTA1962 - TRIPLE DIFFUSED PNP TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. FEATURES High Collector Voltage : VCEO=-230V(Min.) Complementary to KTC5242. Recommended fo.
Fairchild Semiconductor
1
2SA1962 - PNP Epitaxial Silicon Transistor
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou.