A1987 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High breakdown voltage: VCEO = −230 V (m

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High breakdown voltage: VCEO = −230 V (m

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION ·With TO-3PL package ·Complemen

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isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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