2SA1987 Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1987 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min). Complement to Type.

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Datasheet Specifications

Part number: 2SA1987
Manufacturer: Inchange Semiconductor
File Size: 219.82 KB
Datasheet: 2SA1987_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -

2SA1987 Distributors

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2SA1987 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SA1987-like datasheet