2SA1987 Datasheet - Inchange Semiconductor

2SA1987, Power Transistor

isc Silicon PNP Power Transistor 2SA1987 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min). Complement to Type.

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2SA1987_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1987

Manufacturer:

Inchange Semiconductor

File Size:

219.82 KB

Description:

Power Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -

2SA1987 Distributors

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2SA1987 Power Transistor Inchange Semiconductor

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