2SA1986 Datasheet - Inchange Semiconductor

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2SA1986 Power Transistor

isc Silicon PNP Power Transistor 2SA1986 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min). Complement to Type.

2SA1986_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1986

Manufacturer:

Inchange Semiconductor

File Size:

220.90 KB

Description:

Power Transistor

Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5

2SA1986 Distributors

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2SA1986 Power Transistor Inchange Semiconductor

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