2SA1986 Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1986 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min). Complement to Type.

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Datasheet Specifications

Part number: 2SA1986
Manufacturer: Inchange Semiconductor
File Size: 220.90 KB
Datasheet: 2SA1986_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5

2SA1986 Distributors

📁 Related Datasheet

2SA1980 2SA1980-G 2SA1980-L 2SA1980-O 2SA1980-Y 2SA1980E

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2SA1986 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SA1986-like datasheet