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2SA1987 Silicon PNP Transistor

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Description

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm * High breakdown voltage: VCEO = <.

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Features

* ulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 4 2012-08-31

Applications

* 2SA1987 Unit: mm
* High breakdown voltage: VCEO =
* 230 V (min)
* Complementary to 2SC5359
* Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base volta

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2SA1987 Silicon PNP Transistor Toshiba Semiconductor
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