2SA1987 Datasheet - Toshiba Semiconductor

2SA1987 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SC5359 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 230 V Collector-emitter voltage V CEO 230 V Emitter-base voltage VEBO <.

2SA1987 Features

* ulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 4 2012-08-31

2SA1987_ToshibaSemiconductor.pdf