Datasheet Details
- Part number
- 2SA1987
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 205.22 KB
- Datasheet
- 2SA1987_ToshibaSemiconductor.pdf
- Description
- Silicon PNP Transistor
2SA1987 Description
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm * High breakdown voltage: VCEO = <.
2SA1987 Features
* ulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 4 2012-08-31
2SA1987 Applications
* 2SA1987
Unit: mm
* High breakdown voltage: VCEO =
* 230 V (min)
* Complementary to 2SC5359
* Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base volta
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