Datasheet4U Logo Datasheet4U.com

2SA1986 - Silicon PNP Transistor

Features

  • e laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive.

📥 Download Datasheet

Datasheet preview – 2SA1986

📁 Similar Datasheet

  • 2SA1986 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1986 - Power Transistor (Inchange Semiconductor)
  • 2SA1980 - PNP Silicon Transistor (AUK corp)
  • 2SA1980 - PNP Transistor (Secos)
  • 2SA1980 - SILICON PNP TRANSISTOR (LZG)
  • 2SA1980 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SA1980 - PNP Transistor (JCET)
  • 2SA1980-G - PNP Silicon Transistors (MCC)
  • 2SA1980-L - PNP Silicon Transistors (MCC)
  • 2SA1980-O - PNP Silicon Transistors (MCC)
Other Datasheets by Toshiba Semiconductor
  • 2SA1987 - Silicon PNP Transistor
  • 2SA1905 - Silicon PNP Epitaxial Type Transistor
  • 2SA1923 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
  • 2SA1924 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
  • 2SA1925 - TRANSISTOR
  • 2SA1926 - Silicon PNP Epitaxial Type Transistor
  • 2SA1930 - PNP Transistor
  • 2SA1932 - Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications 2SA1986 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.
Published: |