AM11 Datasheet | Specifications & PDF Download

. MSCSM120TAM11CTPAG Datasheet Triple Phase Leg SiC MOSFET Power Module January 2020 Contents Contents Revision History

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MVAM115 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM115 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuni

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AiT Semiconductor Inc. www.ait-ic.com AM1160AH MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES AM1160AH is available in TO-220, TO-220F and

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AiT Semiconductor Inc. www.ait-ic.com AM1160H MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION AM1160H is available in a TO-252 package. ORDERING INFO

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Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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05650 Only One Name Means ProTek’Tion™ high power tvs for automotive load dump applications applications • Automotive ECU Protection PAM11KLD8S24CAP

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Analog Power P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t

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Preliminary Dual-Band WLAN Dual Diplexer 2.4–2.5 GHz and 5–6 GHz AM119 Applications Features ■ WLAN Systems Including 802.11a,b,g ■ LTCC Technology ■

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Analog Power P-Channel 80-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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Preliminary Single Band T/R Antenna Switch Module 800–1000 MHz AM114-609 Applications Outline Drawing 5.40 MOLD CAP DIMENSION ONLY PIN 1 INDICATOR 1.

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Data Sheet 110 V FIAM Features • RoHS Compliant (with F or G pin style) • EMI filtering-EN50121-3-2* • Transient protection-EN50155, • • • • • TM F

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128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - Firs

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Analog Power AM110N06-08P N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed T

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

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4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17

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TCR5AM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5AM series 500 mA CMOS Ultra Low Drop-Out Regulator The TCR5AM series are

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TCR5AM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5AM series 500 mA CMOS Ultra Low Drop-Out Regulator The TCR5AM series are

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