Preliminary Device Specification AM7808 AM7808 High-Efficiency Quad-Band Transmit Dual-Band Receive GSM/GPRS CMOS TX Module ƒ Extended Power Added

Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

Analog Power N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

Super Fast Recovery Diode RFN1LAM7STF Datasheet Series Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) Standard Fast R

TAXIchipTM Integrated Circuits Transparent Asynchronous Transmitter/Receiver Interface Am7968/Am7969-125 Am7968/Am7969-175 Data Sheet and Technical M

PRELIMINARY Am79C874 NetPHY™-1LP Low Power 10/100-TX/FX Ethernet Transceiver DISTINCTIVE CHARACTERISTICS s 10/100BASE-TX Ethernet PHY device with 100

PRELIMINARY Am79C970 PCnetTM-PCI Single-Chip Ethernet Controller for PCI Local Bus DISTINCTIVE CHARACTERISTICS s Single-chip Ethernet controller for

PRELIMINARY Am79C970A PCnetTM-PCI II Single-Chip Full-Duplex Ethernet Controller for PCI Local Bus Product DISTINCTIVE CHARACTERISTICS Single-chip Et

PRELIMINARY Am79C965 PCnetTM-32 Single-Chip 32-Bit Ethernet Controller Advanced Micro Devices DISTINCTIVE CHARACTERISTICS s Single-chip Ethernet con

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PRELIMINARY Am79C850 SUPERNET® 3 DISTINCTIVE CHARACTERISTICS s Compliant with the ANSI X3T9.5/ISO 9314 Advanced Micro Devices s ANSI-compliant TP-P

Analog Power P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

REI Datasheet AM7200 High Density First-In First-Out (FIFO) 256 x 9-Bit CMOS Memory The AM7200 is a RAM-based CMOS FIFO that is 256 words deep with 9

Analog Power AM7940N Dual N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide l

Analog Power P-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

M68AW031A 256 Kbit (32K x8) 3.0V Asynchronous SRAM FEATURES SUMMARY s SUPPLY VOLTAGE: 2.7 to 3.6V s s s s s s Figure 1. Packages 32K x 8 bits SRAM w

Intelligent Accessä Voice Solutions Am79231 Intelligent Subscriber Line Interface Circuit (ISLIC™) DISTINCTIVE CHARACTERISTICS
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