AM- / AMC- / AMS-162 Low Noise Amplifier, 12.5 dB .
GSI Technology
GS816218DGD-250 - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150 .
GSI Technology
GS816218DGB-400 - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150 .
Samsung
KMM366S1623CT - PC100 SDRAM MODULE Preliminary
KMM366S1623CT KMM366S1623CT SDRAM DIMM Preliminary PC100 SDRAM MODULE 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs wi.
Samsung semiconductor
M366S1623DT0 - PC100 Unbuffered DIMM
www.DataSheet4U.com M366S1623DT0 M366S1623DT0 SDRAM DIMM PC100 Unbuffered DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronou.
Samsung semiconductor
MMBC1623L6 - NPN EPITAXIAL SILICON TRANSISTOR
www.DataSheet4U.com .
Samsung semiconductor
KS88C01624 - (KS88C01524 - KS88C01632) 8-bit single-chip CMOS microcontrollers
S3C80F7/C80F9/C80G7/C80G9 (KS88C01524/C01532/C01624/C01632) PRODUCT OVERVIEW 1 www.DataSheet4U.com PRODUCT OVERVIEW S3C8-SERIES MICROCONTROLLERS S.
ams
AS5162 - 12-Bit Magnetic Angle Position Sensor
AS5162 12-Bit Magnetic Angle Position Sensor 1 General Description The AS5162 is a contactless magnetic angle position sensor for accurate angular me.
Samsung semiconductor
K4S161622E - 1M x 16 SDRAM
K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to .
Samsung semiconductor
K4S161622H - 16Mb H-die SDRAM Specification
SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products.
GSI Technology
GS816218DGD-xxxV - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-xxxV 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 333 MHz–150 MHz 1.8 V or 2.5 V .
GSI Technology
GS816236DGD-xxxV - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-xxxV 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 333 MHz–150 MHz 1.8 V or 2.5 V .
GSI Technology
GS816218DD-xxxV - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-xxxV 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 333 MHz–150 MHz 1.8 V or 2.5 V .
GSI Technology
GS816236DD-xxxV - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-xxxV 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 333 MHz–150 MHz 1.8 V or 2.5 V .
GSI Technology
GS816218DGB-xxxV - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-xxxV 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 333 MHz–150 MHz 1.8 V or 2.5 V .
GSI Technology
GS8162V72AC - 18Mb S/DCD Sync Burst SRAMs
Preliminary GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C) 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 256K x 72 18M.
GSI Technology
GS816236DGD-150 - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150 .
GSI Technology
GS816236DGD-200 - 18Mb S/DCD Sync Burst SRAMs
GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150 .
