Datasheet4U Logo Datasheet4U.com

K4S161622E, K4S Datasheet - Samsung semiconductor

K4S161622E 1M x 16 SDRAM

The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cy.

K4S161622E Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

K4S-1616.pdf

This datasheet PDF includes multiple part numbers: K4S161622E, K4S. Please refer to the document for exact specifications by model.
K4S161622E Datasheet Preview Page 2 K4S161622E Datasheet Preview Page 3

Datasheet Details

Part number:

K4S161622E, K4S

Manufacturer:

Samsung semiconductor

File Size:

675.26 KB

Description:

1m x 16 sdram.

Note:

This datasheet PDF includes multiple part numbers: K4S161622E, K4S.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM (Samsung semiconductor)

K4S161622H 16Mb H-die SDRAM Specification (Samsung semiconductor)

K4S160822D 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S1G0632D SDRAM stacked 1Gb D-die (Samsung Electronics)

K4S1G0732B-TC75 SDRAM stacked 1Gb B-die (Samsung semiconductor)

K4S1G0732D SDRAM stacked 1Gb D-die (Samsung Electronics)

K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S280432B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

TAGS

K4S161622E K4S SDRAM Samsung semiconductor

K4S161622E Distributor