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K4S161622E Datasheet - Samsung semiconductor

K4S161622E 1M x 16 SDRAM

The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cy.

K4S161622E Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

K4S161622E Datasheet (675.26 KB)

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Datasheet Details

Part number:

K4S161622E

Manufacturer:

Samsung semiconductor

File Size:

675.26 KB

Description:

1m x 16 sdram.

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K4S161622E SDRAM Samsung semiconductor

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