K4S161622D Datasheet - Samsung semiconductor

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K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM .
The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high per.

K4S161622D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S161622D

Manufacturer:

Samsung semiconductor

File Size:

1.10 MB

Description:

512K x 16Bit x 2 Banks Synchronous DRAM

Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

Applications

* ORDERING INFORMATION Part NO. K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80 K4S161622D-TC/L10 MAX Freq. 183MHz 166MHz 143MHz 125MHz 100MHz LVTTL 50 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Dat

K4S161622D Distributors

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K4S161622D 512K 16Bit Banks Synchronous DRAM Samsung semiconductor

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