Part number:
K4S161622D
Manufacturer:
Samsung semiconductor
File Size:
1.10 MB
Description:
512k x 16bit x 2 banks synchronous dram.
K4S161622D_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S161622D
Manufacturer:
Samsung semiconductor
File Size:
1.10 MB
Description:
512k x 16bit x 2 banks synchronous dram.
K4S161622D, 512K x 16Bit x 2 Banks Synchronous DRAM
The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cy
K4S161622D Features
* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive
📁 Related Datasheet
📌 All Tags