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K4S161622D Datasheet - Samsung semiconductor

K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cy.

K4S161622D Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

K4S161622D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S161622D

Manufacturer:

Samsung semiconductor

File Size:

1.10 MB

Description:

512k x 16bit x 2 banks synchronous dram.

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K4S161622D K4S161622D 512K 16Bit Banks Synchronous DRAM Samsung semiconductor

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