Description
SDRAM stacked 1Gb B-die (x8) CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the ri.
The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high.
Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)
* All inputs are sampled at
Applications
* Ordering Information
Part No. K4S1G0732B-TC75 Orgainization st.128Mb x8 Max Freq. 133MHz Interface LVTTL Package 54pin TSOP(II)
Organization st.128Mx8
Row Address A0~A12
Column Address A0-A9, A11
Row & Column address configuration
Rev. 1.1 February 2004
SDRAM stacked 1Gb B-die (x8)
Package P
