K4S1G0732B_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S1G0732B-TC75, K4S1G0732B
Manufacturer:
Samsung semiconductor
File Size:
126.67 KB
Description:
Sdram stacked 1gb b-die.
Note:
This datasheet PDF includes multiple part numbers: K4S1G0732B-TC75, K4S1G0732B.
Please refer to the document for exact specifications by model.
K4S1G0732B-TC75, K4S1G0732B, SDRAM stacked 1Gb B-die
The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every cloc
K4S1G0732B-TC75 Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)
* All inputs are sampled at
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