K4S1G0732B-TC75 Datasheet, B-die, Samsung semiconductor

K4S1G0732B-TC75 Features

• B-die
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latenc

PDF File Details

Part number:

K4S1G0732B-TC75

Manufacturer:

Samsung semiconductor

File Size:

126.67kb

Download:

📄 Datasheet

Description:

Sdram stacked 1gb b-die. The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated wi

K4S1G0732B-TC75 Application

• Applications Ordering Information Part No. K4S1G0732B-TC75 Orgainization st.128Mb x8 Max Freq. 133MHz Interface LVTTL Package 54pin TSOP(II) Orga

TAGS

K4S1G0732B-TC75

Samsung semiconductor

📁 Related Datasheet

K4S1G0732D - SDRAM stacked 1Gb D-die (Samsung Electronics)
SDRAM stacked 1Gb D-die (x4, x8) SDRAM .. stacked 1Gb D-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS pliant) INFORMATI.

K4S1G0632D - SDRAM stacked 1Gb D-die (Samsung Electronics)
SDRAM stacked 1Gb D-die (x4, x8) SDRAM .. stacked 1Gb D-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS pliant) INFORMATI.

K4S160822D - 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to ch.

K4S161622D - 512K x 16Bit x 2 Banks Synchronous DRAM (Samsung semiconductor)
K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL patible with multiplexed address Dual banks operation M.

K4S161622E - 1M x 16 SDRAM (Samsung semiconductor)
K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to .

K4S161622H - 16Mb H-die SDRAM Specification (Samsung semiconductor)
SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products.

K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to .

K4S280432B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to .

K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432C CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to .

K4S280432D - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
.. K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics rese.