Description
The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with
Features
- JEDEC standard 3.3V power supply.
- LVTTL compatible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave).
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- DQM for masking.
- Auto & self refresh.
- 64ms refresh period (8K Cycle)
CMOS SDRA.
K4S1G0732B_Samsungsemiconductor.pdf