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K4S1G0732B-TC75 Datasheet - Samsung semiconductor

K4S1G0732B-TC75 SDRAM stacked 1Gb B-die

The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every cloc.

K4S1G0732B-TC75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)

* All inputs are sampled at

K4S1G0732B-TC75 Datasheet (126.67 KB)

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Datasheet Details

Part number:

K4S1G0732B-TC75

Manufacturer:

Samsung semiconductor

File Size:

126.67 KB

Description:

Sdram stacked 1gb b-die.

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K4S1G0732B-TC75 SDRAM stacked 1Gb B-die Samsung semiconductor

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