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K4S161622H

16Mb H-die SDRAM Specification

K4S161622H Features

* 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

K4S161622H General Description

The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock c.

K4S161622H Datasheet (108.44 KB)

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Datasheet Details

Part number:

K4S161622H

Manufacturer:

Samsung semiconductor

File Size:

108.44 KB

Description:

16mb h-die sdram specification.
SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products.

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K4S161622H 16Mb H-die SDRAM Specification Samsung semiconductor

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