* 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive
K4S161622H Datasheet (108.44 KB)
K4S161622H
Samsung semiconductor
108.44 KB
16mb h-die sdram specification.
SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products.
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