K4S161622H Datasheet (Samsung semiconductor) - 16Mb H-die SDRAM Specification

K4S161622H, 16Mb H-die SDRAM Specification

The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock c

SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products or specification without notice.

Rev.

1.5 August 2004 SDRAM 16Mb H-die(x16) Revision History Revision 0.0 (May, 2003) - Target spec release.

Revision 0.1 (October, 2003) - Modified tRDL from 1CLK to 2CLK.

Revision 0.2 (October, 2003) - Deleted AC parameter notes 5.

Revision 0.3 (October, 2003) - Modified tRDL & deleted speed 200MHz.

Revision 1.0

K4S161622H Features

* 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive