Part number:
K4S160822D
Manufacturer:
Samsung semiconductor
File Size:
1.16 MB
Description:
2mx8 sdram 1m x 8bit x 2 banks synchronous dram lvttl.
K4S160822D_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S160822D
Manufacturer:
Samsung semiconductor
File Size:
1.16 MB
Description:
2mx8 sdram 1m x 8bit x 2 banks synchronous dram lvttl.
K4S160822D, 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c
K4S160822D Features
* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled
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