K4S160822D Datasheet - Samsung semiconductor

K4S160822D, 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to ch.
The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG′s high pe.

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Datasheet Details

Part number:

K4S160822D

Manufacturer:

Samsung semiconductor

File Size:

1.16 MB

Description:

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled

Applications

* ORDERING INFORMATION Part No. K4S160822DT-G/F7 K4S160822DT-G/F8 K4S160822DT-G/FH K4S160822DT-G/FL K4S160822DT-G/F10 Max Freq. 143MHz 125MHz 100MHz 100MHz 100MHz LVTTL 44 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM

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K4S160822D 2Mx8 SDRAM 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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