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K4S160822D Datasheet - Samsung semiconductor

K4S160822D 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c.

K4S160822D Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled

K4S160822D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S160822D

Manufacturer:

Samsung semiconductor

File Size:

1.16 MB

Description:

2mx8 sdram 1m x 8bit x 2 banks synchronous dram lvttl.

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K4S160822D K4S160822D 2Mx8 SDRAM 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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