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K4S280432B Datasheet - Samsung semiconductor

K4S280432B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

The K4S280432B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S280432B Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 Page ) -. Burst type (Sequential & Interleave) All inputs are sampled at the

K4S280432B_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S280432B

Manufacturer:

Samsung semiconductor

File Size:

109.58 KB

Description:

128mbit sdram 8m x 4bit x 4 banks synchronous dram lvttl.

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K4S280432B K4S280432B 128Mbit SDRAM 4Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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