Datasheet4U Logo Datasheet4U.com

K4S280432D

128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

K4S280432D Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)

* All inputs are sampled a

K4S280432D General Description

The K4S280432C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S280432D Datasheet (102.74 KB)

Preview of K4S280432D PDF

Datasheet Details

Part number:

K4S280432D

Manufacturer:

Samsung semiconductor

File Size:

102.74 KB

Description:

128mbit sdram 8m x 4bit x 4 banks synchronous dram lvttl.
www.DataSheet4U.com K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001
* Samsung Electronics .

📁 Related Datasheet

K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to .

K4S280432B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to .

K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432C CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to .

K4S280432E - 128Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan.

K4S280432E-TC75 - 128Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan.

K4S280432E-TL75 - 128Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan.

K4S280432F - 128Mb F-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves .

K4S280432F-TC75 - 128Mb F-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves .

TAGS

K4S280432D 128Mbit SDRAM 4Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Image Gallery

K4S280432D Datasheet Preview Page 2 K4S280432D Datasheet Preview Page 3

K4S280432D Distributor