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Low Cost SMT Dual Band Diplexer DP52-0002 DP52-0002 Low Cost SMT Dual Band Diplexer 824 – 960 / 1850 – 1990 MHz (AMPS/PCS) 880 – 960 / 1700 – 1900

MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier

TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min) • Complementa

ELH0002H 883 7801301XX ELH0002H 883 7801301XX Current Amplifier Features          400 mA pulsed output current DC to 30 MHz bandwidth 200 V

Primary Side Regulation PWM Controller for Automotive Applications SFA0002 Data Sheet Description The SFA0002 is the switching power supply IC for f

RoHS Compliant Silicon Doubled Balanced HMIC Mixer 1700 – 2500 MHz Features • • • • • • • • Low Cost Miniature Plastic Package 5.5 dB Typical Conversi

High-Performance Fractional-N Frequency Synthesizer ICS8430002 www.DataSheet4U.com DATA SHEET General Description The ICS8430002 is a general purpo

CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

CMPA0530002S 2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC Description Wolfspeed’s CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Trans

Datasheet 1200V/2A SiC Schottky Barrier Diode Characteristic  Zero Reverse Recovery Current  Positive temperature coefficient  Temperature-independ

Click here for production status of specific part numbers. MAX30002 Ultra-Low-Power, Single-Channel Integrated Bioimpedance (BioZ) AFE General Desc

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MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  C

DATASHEET ISL70002SEH, ISL73002SEH Radiation Hardened and SEE Hardened 22A Synchronous Buck Regulators with Current Sharing FN8264 Rev.12.01 Mar 31,

1000 Base CX Transformer Modules ★ Designed to meet IEEE802.3ab requirement ★ Designed to meet IR 2350C peak requirement ★ Primary inductance 350µH

POWER MANAGEMENT TS80002 High-Efficiency Transmit Controller for Wireless Power Systems Features  Supports portable wireless charging applications

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minim

CMPA0060002D 2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility