AN-0002 Datasheet | Specifications & PDF Download

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YBSN100005 THRU YBSN10010 RoHS COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Glass passivated chip junction ● Ideal for aut

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Product Folder Order Now Technical Documents Tools & Software Support & Community TLK10002 SLLSE75B – MAY 2011 – REVISED JULY 2016 TLK10002 10-Gb

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tm TE CH T63H0002A T63H0002A Features Low supply current www.DataSheet4U.com Li-Ion Battery Protector Supply current Standby current (after detec

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GP2W0001YP/GP2W0002YP IrDA Technical Information Low Power Infrared Transceiver The GP2W0002YP is the same module, and adds an integral Electro-Magne

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www.DataSheet4U.com RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.3.01 Nov 21, 2007 Features • High output power, High gain, High efficie

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High Frequency Ceramic Solutions 2.45 GHz, conjugate match for CSR Chipsets BC 03, 04 Detail Specification: 07/17/09 General Specifications Part Numbe

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・PRELIMINARY Notice: This is not a final specification Some parametric are subject to change. ＩＮJ0002AＸ SERIES High speed switching Silicon P-channe

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MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  C

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0002 ·Minimum Lot-to-Lot

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CMPA0060002D 2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility

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Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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Primary Side Regulation PWM Controller for Automotive Applications SFA0002 Data Sheet Description The SFA0002 is the switching power supply IC for f

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Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

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Single Channel CMOS Delay Line 6T80002 Datasheet Description The device is a single channel, fixed delay IC. Ultra-compact 2 × 2 mm 8-DFN package wi

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MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier

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RoHS Compliant Silicon Doubled Balanced HMIC Mixer 1700 – 2500 MHz Features • • • • • • • • Low Cost Miniature Plastic Package 5.5 dB Typical Conversi

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TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min) • Complementa

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