AN-0002 Datasheet | Specifications & PDF Download

Distributing Tomorrow’s Technologies For Today’s Designs Toll-Free: 1-800-777-7334 Since 1970 http://www.cdiweb.com/PortalMain.aspx?pid=704 M5100 He

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Datasheet 1200V/2A SiC Schottky Barrier Diode Characteristic  Zero Reverse Recovery Current  Positive temperature coefficient  Temperature-independ

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minim

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Evaluation Kit Available Design Resources Tools and Models Support Click here to ask an associate for production status of specific part numbers.

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1000 Base CX Transformer Modules ★ Designed to meet IEEE802.3ab requirement ★ Designed to meet IR 2350C peak requirement ★ Primary inductance 350µH

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Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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Click here for production status of specific part numbers. MAX30002 Ultra-Low-Power, Single-Channel Integrated Bioimpedance (BioZ) AFE General Desc

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DATASHEET ISL70002SEH, ISL73002SEH Radiation Hardened and SEE Hardened 22A Synchronous Buck Regulators with Current Sharing FN8264 Rev.12.01 Mar 31,

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CMPA0530002S 2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC Description Wolfspeed’s CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Trans

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MLX80002/MLX80004 Enhanced Universal Dual/Quad LIN Transceiver Datasheet 1. Features and Benefits  LIN 2.x/SAE J2602 and ISO17987-4 compliant  Qua

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Primary Side Regulation PWM Controller for Automotive Applications SFA0002 Data Sheet Description The SFA0002 is the switching power supply IC for f

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CMPA0060002D 2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility

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MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  C

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POWER MANAGEMENT TS80002 High-Efficiency Transmit Controller for Wireless Power Systems Features  Supports portable wireless charging applications

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MAX40002–MAX40005 nanoPower 4-Bump Comparator in Ultra-Tiny 0.73mm x 0.73mm WLP/SOT23 Packages General Description The MAX40002–MAX40005 tiny, singl

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0002 ·Minimum Lot-to-Lot

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MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier

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Low Cost SMT Dual Band Diplexer DP52-0002 DP52-0002 Low Cost SMT Dual Band Diplexer 824 – 960 / 1850 – 1990 MHz (AMPS/PCS) 880 – 960 / 1700 – 1900

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MEL SERIES Driving Inverter Transformers ® Phone: 1.605.884.0195 Fax: 1.605.884.0199 www.minntronix.com MEL SERIES Mechanical A 0.57 0.57 (14.5)

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TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications • High collector voltage: VCEO = 160 V (min) • Complementar

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