GT0002
BESTJOB
196.14 KB
1000 base cx transformer modules.
1000 Base CX Transformer Modules
★ Designed to meet IEEE802.3ab requirement
★ Designed to meet IR 2350C peak requirement
★ Primary inductance 350µH.
📁 Related Datasheet
GT0001 - 1000 Base CX Transformer Modules
(BESTJOB)
1000 Base CX Transformer Modules
★ Designed to meet IEEE802.3ab requirement
★ Designed to meet IR 2350C peak requirement
★ Primary inductance 350µH.
GT007N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT007N04TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT007N04TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT007N04TL - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT007N04TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT007N04TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT013N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT013N04T
N-Channel Enhancement Mode Power MOSFET
Description
The GT013N04T uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT013N04T - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT013N04T
N-Channel Enhancement Mode Power MOSFET
Description
The GT013N04T uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT015N06 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT015N06TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT015N06TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT015N06TL - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT015N06TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT015N06TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT016N10 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT016N10TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT016N10TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
