GT016N10 Datasheet, Mosfet, GOFORD

GT016N10 Features

• Mosfet l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 362A < 1.6mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram D Application l Power switch l DC/DC converters Or

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Part number:

GT016N10

Manufacturer:

GOFORD

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856.37kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of a

GT016N10 Application

• Applications General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 362A < 1.6mΩ l 100% Avalanche Tested l RoHS Compliant S

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GT016N10

GOFORD

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