GT0001
BESTJOB
196.14kb
1000 base cx transformer modules.
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GT0002 - 1000 Base CX Transformer Modules
(BESTJOB)
1000 Base CX Transformer Modules
★ Designed to meet IEEE802.3ab requirement
★ Designed to meet IR 2350C peak requirement
★ Primary inductance 350µH.
GT007N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT007N04TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT007N04TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT007N04TL - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT007N04TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT007N04TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT013N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT013N04T
N-Channel Enhancement Mode Power MOSFET
Description
The GT013N04T uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT013N04T - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT013N04T
N-Channel Enhancement Mode Power MOSFET
Description
The GT013N04T uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT015N06 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT015N06TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT015N06TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT015N06TL - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT015N06TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT015N06TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT016N10 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT016N10TL
N-Channel Enhancement Mode Power MOSFET
Description
The GT016N10TL uses advanced trench technology to
provide excellent RDS(ON) , low gat.
GT016N10 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT016N10Q
N-Channel Enhancement Mode Power MOSFET
Description
The GT016N10Q uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT016N10Q - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT016N10Q
N-Channel Enhancement Mode Power MOSFET
Description
The GT016N10Q uses advanced trench technology to
provide excellent RDS(ON) , low gate .