Datasheet4U Logo Datasheet4U.com

GT013N04T

N-Channel Enhancement Mode Power MOSFET

GT013N04T Features

* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 40V 220A < 2.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device GT013N04T Package TO-220 Marking GT013N04 Absolute Maximum Ratings TC = 25ºC, unless othe

GT013N04T Datasheet (949.12 KB)

Preview of GT013N04T PDF

Datasheet Details

Part number:

GT013N04T

Manufacturer:

GOFORD

File Size:

949.12 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

GT013N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT013N04T N-Channel Enhancement Mode Power MOSFET Description The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT015N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat.

GT015N06TL - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat.

GT016N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT016N10TL N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gat.

GT016N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT016N10Q N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT016N10Q - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT016N10Q N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT016N10TL - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT016N10TL N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gat.

GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
1000 Base CX Transformer Modules ★ Designed to meet IEEE802.3ab requirement ★ Designed to meet IR 2350C peak requirement ★ Primary inductance 350µH.

TAGS

GT013N04T N-Channel Enhancement Mode Power MOSFET GOFORD

Image Gallery

GT013N04T Datasheet Preview Page 2 GT013N04T Datasheet Preview Page 3

GT013N04T Distributor