AOI418 Datasheet | Specifications & PDF Download

AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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isc N-Channel MOSFET Transistor AOI418 ·FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Res

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AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide

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isc N-Channel MOSFET Transistor AOI4184 ·FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Re

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isc P-Channel MOSFET Transistor AOI4185 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-R

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AOD4185/AOI4185 40V P-Channel MOSFET General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gat

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