AOT1N60 Datasheet | Specifications & PDF Download

AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET proce

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isc N-Channel MOSFET Transistor AOT1N60 FEATURES ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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