APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFE.
Microsemi
APT11N80BC3G - Super Junction MOSFET
APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy.
INCHANGE
APT11N80BC3G - N-Channel MOSFET
isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On.