APT5010B2 Datasheet | Specifications & PDF Download

500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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isc N-Channel MOSFET Transistor APT5010B2LL FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On

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APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhanc

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APT5010B2VFR 500V 47A 0.100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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APT5010B2VR 500V 47A 0.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technol

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APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhance

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isc N-Channel MOSFET Transistor APT5010B2FLL FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source O

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APT5010B2LC APT5010LLC 500V 47A 0.100W POWER MOS VITM B2LC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancemen

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