AT4 Datasheet | Specifications & PDF Download

Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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w w w .D at h S a t e e 4U . m o c Agilent AT-42085 Up to 6 GHz Data Sheet Features Medium Power Silicon Bipolar Transistor • High Output P

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AT45DB161E 16-Mbit DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory DATASHEET Features  Single 2.3V - 3.6V or 2.5V - 3

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Configurations: – Can be configured as a combination of keys and input/output lines • Number of Keys: – 2 to 6 • Number of I/O Lines: – 7

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Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture –

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www.DataSheet4U.com Features • 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance – Asynchronous Access Time – 70 ns – Pag

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features For general purpose applications. These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junct

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Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K bytes Boot Bl

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Complies with Intel Low-Pin Count (LPC) Interface Specification Revision 1.1 – Supports both Firmware Hub (FWH) and LPC Memory Read and Wri

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www.DataSheet4U.com Features • 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance – Asynchronous Access Time – 70 ns – Pag

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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Features • Multichip Module Containing Field Programmable System Level Integrated Circuit (FPSLIC®) and Secure Configuration EEPROM Memory • 512 Kbits

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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